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Search Results: Records 1-20 displayed on this page of 31

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Journal Articles

Magnetic-impurity-induced modifications to ultrafast carrier dynamics in the ferromagnetic topological insulators Sb $_{2-x}$ V $_{x}$ Te $_{3}$

Sumida, Kazuki*; Kakoki, Masaaki*; Reimann, J.*; Nurmamat, M.*; Goto, Shinichi*; Takeda, Yukiharu; Saito, Yuji; Kokh, K. A.*; Tereshchenko, O. E.*; Gdde, J.*; et al.

New Journal of Physics (Internet), 21(9), p.093006_1 - 093006_8, 2019/09

https://doi.org/10.1088/1367-2630/ab3ac6

Times Cited Count：11 Percentile：64.45(Physics, Multidisciplinary)

Journal Articles

Effects of a low-energy proton irradiation on n $^{+}$ /p-AlInGaP solar cells

Lee, H. S.*; Yamaguchi, Masafumi*; Ekins-Daukes, N. J.*; Khan, A.*; Takamoto, Tatsuya*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi

Physica B; Condensed Matter, 376-377, p.564 - 567, 2006/04

https://doi.org/10.1016/j.physb.2005.12.142

Times Cited Count：2 Percentile：12.56(Physics, Condensed Matter)

no abstracts in English

Journal Articles

High-injection carrier dynamics generated by MeV heavy ions impacting high-speed photodetectors

Laird, J. S.; Hirao, Toshio; Onoda, Shinobu; Ito, Hisayoshi

Journal of Applied Physics, 98(1), p.013530_1 - 013530_14, 2005/07

https://doi.org/10.1063/1.1947381

Times Cited Count：45 Percentile：80.53(Physics, Applied)

no abstracts in English

Journal Articles

Defect observation of AlInGaP irradiated with 30 keV protons for multi-junction space solar cells

Lee, H. S.*; Ekins-Daukes, N. J.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.

Proceedings of 31st IEEE Photovoltaic Specialists Conference and Exhibition (PVSC-31), p.556 - 558, 2005/00

no abstracts in English

Journal Articles

Change of majority-carrier concentration in p-type silicon by 10 MeV proton irradiation

Iwata, Hiroshi*; Kagamihara, Satoshi*; Matsuura, Hideharu*; Kawakita, Shiro*; Oshima, Takeshi; Kamiya, Tomihiro

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.143 - 146, 2004/10

no abstracts in English

Journal Articles

Carrier removal and defect generation in lattice-mismatched InGaP under 1 MeV electron irradiation

Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.

Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6), p.87 - 91, 2004/10

no abstracts in English

Journal Articles

Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

Ekins-Daukes, N. J.*; Lee, H. S.*; Sasaki, Takuo*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Agui, Takaaki*; Kamimura, Kunio*; Kaneiwa, Minoru*; Imaizumi, Mitsuru*; et al.

Applied Physics Letters, 85(13), p.2511 - 2513, 2004/09

https://doi.org/10.1063/1.1794371

Times Cited Count：11 Percentile：42.73(Physics, Applied)

no abstracts in English

Journal Articles

Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe $_{2}$ thin films

Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Kawakita, Shiro*; Imaizumi, Mitsuru*; Matsuda, Sumio*

Physica Status Solidi (A), 199(3), p.471 - 474, 2003/10

https://doi.org/10.1002/pssa.200306669

Times Cited Count：3 Percentile：21.31(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

3MeV electron irradiation-induced defects in CuInSe $_{2}$ thin films

Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Oshima, Takeshi; Ito, Hisayoshi; Kawakita, Shiro*; Imaizumi, Mitsuru*; Matsuda, Sumio*; Yoshida, Akira*

Journal of Physics and Chemistry of Solids, 64(9-10), p.1887 - 1890, 2003/09

https://doi.org/10.1016/S0022-3697(03)00109-4

Times Cited Count：12 Percentile：53.83(Chemistry, Multidisciplinary)

no abstracts in English

Journal Articles

Experiments of continuous gas separation for D $_{2}$ /He mixed gas under room temperature

Tanzawa, Sadamitsu; Hiroki, Seiji; Abe, Tetsuya

Shinku, 46(3), p.154 - 157, 2003/03

https://doi.org/10.3131/jvsj.46.154

no abstracts in English

Journal Articles

Majority- and minority-carrier deep level traps in proton-irradiated $n^{+}/p$ -InGaP space solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Applied Physics Letters, 81(1), p.64 - 66, 2002/07

https://doi.org/10.1063/1.1491005

Times Cited Count：17 Percentile：55.81(Physics, Applied)

We studied the properties of observed defects in n $^{+}$ /p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E $_{V}$ +0.900.05eV), HP2 (E $_{V}$ +0.730.05eV), H2 (E $_{V}$ +0.55eV),and EP1 (E $_{C}$ 0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.

Journal Articles

Investigation of electron irradiation induced defects in single crystal CuInSe $_{2}$ thin films

Fujita, Naoki*; Lee, H.-S.*; Okada, Hiroshi*; Wakahara, Akihiro*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Shingaku Giho, 102(77), p.79 - 84, 2002/05

http://ci.nii.ac.jp/naid/110003175318

no abstracts in English

Journal Articles

Effects of proton irradiation on $n^{+}p$ InGaP solar Cells

Dharmarasu, N.*; Khan, A.*; Yamaguchi, Masafumi*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Journal of Applied Physics, 91(5), p.3306 - 3311, 2002/03

https://doi.org/10.1063/1.1445276

Times Cited Count：25 Percentile：66.93(Physics, Applied)

3MeV proton irradiation effects on InGaP single junction and InGaP/GaAs two junction cells were studied. The degradation of electrocal properties for InGaP cells was smaller than that for InGaP/GaAs cells. The results of the measurement of spectral response showed the large degradation in long wavelength. This indicates that GaAs cell degrades. The Damage coefficient of minority carrier diffusion length was estimated to be 7.910 $^{-5}$ for InGaP and 1.610 $^{-4}$ for GaAs. These values of the damage coefficient for InGaP and GaAs are 580 times and 280 times larger than those for InGaP and GaAs irradiated with 1MeV electrons.

Journal Articles

Deep-level transient spectroscopy analysis of proton-irradiated n $^{+}$ /p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

Physica B; Condensed Matter, 308-310, p.1181 - 1184, 2001/12

https://doi.org/10.1016/S0921-4526(01)00935-8

Times Cited Count：7 Percentile：41.34(Physics, Condensed Matter)

Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.

Journal Articles

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijunction solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Yamada, Takashi*; Tanabe, Tatsuya*; Takagishi, Shigenori*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; et al.

Applied Physics Letters, 79(15), p.2399 - 2401, 2001/10

https://doi.org/10.1063/1.1409270

Times Cited Count：75 Percentile：90.91(Physics, Applied)

The radiation response of 3MeV proton-irradiated InGaP, InGaAsP, and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response. The damage coefficient K $_{L}$ for 3MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with increase in the function of In-P bonds in those materials. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells.